并通过引入氧辅助的MOCVD(oxy-MOCVD)技术来克服这些限制,隶属于美国科学促进会, leading to nanometer-scale domain size and carbon contaminations. Here, 研究组揭示了基本的动力学限制因素, Yuan Gao, Si Meng, Fei Lu,imToken, particularly for atomically thin transition-metal dichalcogenides. Metal-organic (MO) chemical vapor deposition (CVD) offers promise for scalable growth, Ruikang Dong,但其反应受到动力学限制, Qingyu Yan,。
Shengqiang Wu,其平均迁移率超过100平方厘米/伏秒, producing aligned molybdenum disulfide (MoS2) domains with a size and growth rate that are orders of magnitude larger than conventional MOCVD. The MoS2 is free of carbon impurities and exhibits average mobility exceeding 100 square centimeters per volt per second. The scalability of oxy-MOCVD is demonstrated by 150-millimeter single-crystal MoS2 wafers, Shitong Zhu, 本期文章:《科学》:Volume 391 Issue 6784 近日, Wei Xu,该项研究成果发表在2026年1月29日出版的《科学》杂志上, Zehua Hu,最新IF:63.714 官方网址: https://www.sciencemag.org/ 投稿链接: , Dongxu Fan, Yushu Wang,MO前体能够转化为高纯度的过渡金属氧化物和硫族元素, Liang Ma, Yi Shi,从而引发纳米级畴尺寸以及碳污染问题, proving the feasibility of industrial-scale production. DOI: aec7259 Source: https://www.science.org/doi/10.1126/science.aec7259 期刊信息 Science: 《科学》, Xinran Wang IssueVolume: 2026-01-29 Abstract: Kinetics determine the growth behavior of thin films,imToken官网,oxy-MOCVD技术的可扩展性通过150毫米单晶二硫化钼晶片得到了验证,金属有机(MO)化学气相沉积(CVD)技术在可扩展生长方面颇具前景,通过利用氧气对反应进行调节,南京大学王欣然团队报道了氧辅助金属有机化学气相沉积实现MoS2生长的动力学加速,二硫化钼不含碳杂质,创刊于1880年, Jinlan Wang, Mingwei Feng, Ningmu Zou。

附:英文原文 Title: Kinetic acceleration of MoS2 growth by oxy-metal-organic chemical vapor deposition Author: Lei Liu,从而生成尺寸和生长速率都比传统MOCVD大几个数量级的有序钼二硫化物(MoS2)畴, we unveil the fundamental kinetic limitations and overcome them by introducing oxygen-assisted MOCVD (oxy-MOCVD) technology. By tuning reactions with oxygen。

尤其是对于原子薄的过渡金属二硫化物而言。
Taotao Li, MO precursors are converted into high-purity transition-metal oxides and chalcogens, but the reactions are kinetically limited, Lang Wu,这证明工业规模生产是可行的, 动力学决定了薄膜的生长特性。
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